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| 2SK4108 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOS VI) 2SK4108 Switching Regulator Applications Low drain-source ON resistance High forward transfer admittance Low leakage current Enhancement mode : RDS (ON) = 0. 21 (typ.) : |Yfs| = 14 S (typ.) Unit: mm : IDSS = 100 A (max) (VDS = 500 V) : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 500 500 30 20 80 150 960 20 15 150 -55~150 Unit V V V A A W mJ A mJ C C 1. GATE 2. DRAIN (HEAT SINK) 3. SOURCE Pulse (Note 1) Drain power dissipation (Tc = 25C) Single-pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA 2-16C1B Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, Weight: 4.6 g (typ.) etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristic Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 0.833 50 Unit C / W C / W Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: VDD = 90 V, Tch = 25C (initial), L = 4.08 mH, RG = 25 , IAR = 20 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 1 2007-06-29 2SK4108 Electrical Characteristics (Ta = 25C) Characteristic Gate leakage current Gate-source breakdown voltage Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton 50 tf toff Qg Qgs Qgd VDD 400 V, VGS = 10 V, ID = 20 A VGS 10 V 0V ID = 10A RL = 20 VDS = 25 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 25 V, VDS = 0 V IG = 10 A, VDS = 0 V VDS = 500 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 10 A VDS = 10 V, ID = 10 A Min -- 30 -- 500 2.0 -- 4.0 -- -- -- -- Typ. -- -- -- -- -- 0.21 14 3400 25 320 70 Max 10 -- 100 -- 4.0 0.27 -- -- -- -- -- pF Unit A V A V V S Turn on time Switching time Fall time -- 130 -- ns VDD 200 V - Duty < 1%, tw = 10 s = -- 70 -- Turn off time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("Miller") charge -- -- -- -- 280 70 45 25 -- -- -- -- nC Source-Drain Ratings and Characteristics (Ta = 25C) Characteristic Continuous drain reverse current (Note 1) Pulse drain reverse current (Note 1) Forward voltage (diode) Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr Test Condition -- -- IDR = 20 A, VGS = 0 V IDR = 20 A, VGS = 0 V dIDR / dt = 100 A / s Min -- -- -- -- -- Typ. -- -- -- 1300 20 Max 20 80 -1.7 -- -- Unit A A V ns C Marking TOSHIBA K4108 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2007-06-29 2SK4108 ID - VDS ID - VDS 10 Common source 10 Tc = 25C Pulse Test 20 6 10 5.5 8 16 8 5.25 6 5 4 6 Common source Tc = 25C Pulse Test 8 (A) (A) 5.75 12 5.5 8 ID Drain current Drain current ID 5.25 5 2 4.5 VGS = 4V 4 4.5 VGS = 4 V 5 0 0 10 20 30 40 50 0 0 1 2 3 4 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID - VGS 50 20 Common source VDS = 20 V Pulse Test VDS - VGS Common source Tc = 25C Pulse Test 40 (V) VDS Drain-source voltage 25 16 ID (A) 30 12 Drain current 20 8 ID = 20 A 4 10 5 100 0 Tc = -55C 0 2 4 6 8 10 0 0 4 8 12 16 20 Gate-source voltage VGS (V) Gate-source voltage VGS (V) |Yfs| - ID 100 1.0 Common source VDS = 20 V Pulse Test RDS (ON) - ID Tc = -55C 10 25 100 Drain-source ON resistance RDS (ON) () Forward transfer admittance Yfs (S) Common source Tc = 25C VGS = 10 V Pulse Test 0.1 1 10 100 1 1 10 100 Drain current ID (A) Drain current ID (A) 3 2007-06-29 2SK4108 RDS (ON) - Tc 1.0 IDR - VDS 100 Common source Tc = 25C Pulse Test Drain-source ON resistance RDS (ON) () 0.8 Drain reverse current IDR (A) Common source VGS = 10 V Pulse Test 10 0.6 ID = 20A 0.4 10 5 10 1 5 3 0.2 0 -80 -40 0 40 80 120 160 0.1 1 0 0.2 0.4 0.6 VGS = 0 V 0.8 1.0 1.2 1.4 Case temperature Tc (C) Drain-source voltage VDS (V) Capacitance - VDS 10000 Ciss 5 Vth - Tc Common source VDS = 10 V ID = 1mA Pulse Test Gate threshold voltage Vth (V) 4 (pF) 1000 Coss Capacitance C 3 2 100 Common source VGS = 0 V f = 1 MHz Tc = 25C Crss 1 10 0.1 1 10 100 0 -80 -40 0 40 80 120 160 Drain-source voltage VDS (V) Case temperature Tc (C) PD - Tc 200 500 VDS 400 Dynamic input / output characteristics 20 PD (W) 150 16 200V Drain power dissipation VDS Drain-source voltage 100 VDD = 100V 400V 200 VGS 100 Common source ID = 20 A Ta = 25C Pulse Test 4 8 50 0 0 40 80 120 160 200 0 0 20 40 60 80 100 0 120 Case temperature Tc (C) Total gate charge Qg (nC) 4 2007-06-29 Gate-source voltage 300 12 VGS (V) (V) 2SK4108 SAFE OPERATING AREA 1000 1000 EAS - Tch EAS (mJ) Avalanche energy 100 ID max (pulse) * 100 s * ID max (continuous) 1 ms * 800 Drain current ID (A) 600 10 DC OPEATION Tc = 25C 400 1 200 0.1 Single pulse Ta=25 Curves must be derated linearly with increase in temperature. VDSS max 0 25 50 75 100 125 150 Channel temperature (initial) 1000 Tch (C) 0.01 1 10 100 Drain-source voltage VDS (V) 15 V -15 V BVDSS IAR VDD Test circuit Wave form VDS RG = 25 VDD = 90 V, L = 4.08 mH AS = 1 B VDSS L I2 B 2 VDSS - VDD 5 2007-06-29 2SK4108 RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 20070701-EN * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2007-06-29 |
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